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| subject : | App-Note: 011 - Impact of Drain Voltage on GaN RF Transistors and Safe Operating Area (SOA) Analysis |
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| writer : | ADMIN |
App Note 011 Impact of Drain Voltage on GaN RF Transistors and Safe Operating Area (SOA) Analysis While increasing the drain voltage in GaN RF transistors can boost output power, it introduces significant challenges related to thermal management, efficiency, and reliability. Understanding the SOA and adhering to its constraints is crucial for optimizing performance and ensuring long-term stability. Proper design considerations, including thermal management and optimized
biasing, can help mitigate these issues and extend the operational lifespan of
GaN devices. |
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